ELMSFORD, NY (April 5, 2006) - U.S. Patent No. 6,875,671 , entitled "Method of Fabricating Vertical Integrated Circuits" issued on April 5, 2005. Congratulations to Dr. Sadeg M. Faris. This patent adds to Reveo's portfolio in micro/nano-structures and processed for forming such micro/nano-structures. This patent adds to a very significant group of portfolios owned by Reveo including the fields of thin layer processing and vertically integrated devices. These portfolios solve many problems in various industries, including waste of valuable silicon material, for example, using conventional Silicon-on-Insulator processing technologies.
According to Dr. Faris, the integrated circuits have made a huge impact on our civilization. The performance continues to increase while the price decreases. Beyond making the integrated circuits below 20 nanometer in size, fundamental limitations will be met in improving price and performance. This patent is significant in that it makes contributions to exploiting multiple microchips in the third dimension to increase the performance and reliability.
In particular, this patent is directed to a method of fabricating a vertically integrated circuit. A bulk substrate is provided. Strong bond regions and weak bond regions are selectively creating on the bulk substrate. A first bonded semiconductor layer is vertically supported on the substrate and semiconductor device portions are formed thereon or therein generally at the weak bond regions. The first semiconductor layer is removed from the bulk substrate and bonded to a second semiconductor layer. The process may be repeated to form a vertically integrated device.
Reveo believes that this patent will lead the way for multiple layer devices. Using the weak bond regions as the regions where the devices are formed, separating or peeling the device layer from the bulk substrate minimizes or eliminates damage or perturbation to the devices or the surrounding regions. This patent has a parent application expected to issue in 2006, and many other related applications granted and pending.
Anyone interested in licensing this patent should contact Ralph.Crispino@Reveo.com.